IXGP48N60A3 IXYS, IXGP48N60A3 Datasheet

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IXGP48N60A3

Manufacturer Part Number
IXGP48N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGP48N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
224
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.60
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-220
GenX3
IGBTs
Ultra Low Vsat PT IGBTs for
up to 5kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
I
I
V
V
I
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
C
C
C
CE
CE
J
J
C
C
C
C
= 250μA, V
= 32A, V
GE
= 250μA, V
= 0V, V
= V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
600V
CES
, V
GE
GE
GE
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 0V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
T
J
= 125°C
IXGA48N60A3
IXGH48N60A3
IXGP48N60A3
10..65 / 2.2..14.6
Characteristic Values
Min.
600
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
V
CE
1.13 / 10
I
CM
= 96
V
120
1.18
±20
±30
300
300
150
300
260
Typ.
600
600
2.5
3.0
6.0
48
CES
±100 nA
1.35
Nm/lb.in.
250 μA
Max.
5.5
25 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
g
V
I
V
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
Features
Advantages
Applications
G = Gate
E = Emitter
C110
Optimized for Low Conduction Losses
Square RBSOA
High Current Handling Capability
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
C
C E
≤ ≤ ≤ ≤ ≤ 1.35V
= 600V
= 48A
E
G
E
C
Tab = Collector
C (Tab)
C (Tab)
C (Tab)
= Collector
DS99581D(03/12)

Related parts for IXGP48N60A3

IXGP48N60A3 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 32A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 120 48 300 = 5Ω ≤ CES 300 -55 ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 TO-247 Outline Max Gate 2 = Collector Emitter 0.42 °C/W °C/W ° ...

Page 3

... T = 25ºC J 160 140 120 100 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...

Page 4

... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 8. Gate Charge V = 300V 32A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...

Page 5

... IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 5Ω 15V 480V 125º 25ºC ...

Page 6

... Ω 15V 480V 105 115 125 IXGA48N60A3 IXGP48N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 25ºC < T < 125º 25º 125º Ω 480V ...

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