IXGP48N60A3 IXYS, IXGP48N60A3 Datasheet - Page 2

• Manufacturer Part Number: IXGP48N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGP48N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 224
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.60
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCK
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
g
ge
gc
TO-263 Outline
J
= 25°C unless otherwise specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
TO-220
TO-247
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
V
I
C
C
C
C
CE
CE
CE
= 32A, V
= 32A, V
= 32A, V
= 32A, V
= 480V, R
= 480V, R
= 25V, V
CE
GE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 5Ω
= 5Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
30
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
3190
0.95
1.97
0.50
0.21
175
110
334
224
545
380
2.9
5.6
CE
43
21
42
25
30
24
30
48
(clamp), T
Max.
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
J
°C/W
°C/W
or R
IXGA48N60A3 IXGP48N60A3
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 Outline
TO-220 Outline
1 = Gate
2 = Collector
3 = Emitter
6,727,585
6,771,478 B2 7,071,537
Pins: 1 - Gate
3 - Emitter
IXGH48N60A3
7,005,734 B2
7,063,975 B2
2 - Collector
7,157,338B2