IXGT64N60A3 IXYS, IXGT64N60A3 Datasheet - Page 3

• Manufacturer Part Number: IXGT64N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGT64N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 222
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.0
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

© 2008 IXYS CORPORATION, All rights reserved
100
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
0.4
0.4
vs. Gate-to-Emitter Voltage
8
I
0.6
0.6
C
= 100A
V
V
V
50A
25A
9
CE
CE
GE
@ 125ºC
0.8
0.8
@ 25ºC
- Volts
- Volts
- Volts
10
1.0
1.0
V
11
GE
V
GE
1.2
= 15V
1.2
13V
11V
= 15V
12
13V
11V
T
1.4
1.4
J
13
= 25ºC
9V
7V
1.6
1.6
14
9V
7V
5V
1.8
1.8
15
280
240
200
160
120
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
80
60
40
20
0
0
4.0
-50
0
V
GE
V
Fig. 2. Extended Output Characteristics
4.5
GE
-25
1
= 15V
= 15V
Fig. 4. Dependence of V
13V
11V
5.0
2
Fig. 6. Input Admittance
0
Junction Temperature
T
7V
J
9V
T
5.5
J
= 125ºC
- Degrees Centigrade
- 40ºC
25
3
25ºC
V
V
CE
GE
6.0
@ 25ºC
- Volts
- Volts
50
4
6.5
75
5
IXGT64N60A3
IXGH64N60A3
7.0
I
I
I
CE(sat)
C
C
C
= 100A
= 50A
= 25A
100
6
7.5
on
125
8.0
7
150
8.5
8