IXGT64N60A3 IXYS, IXGT64N60A3 Datasheet - Page 6

• Manufacturer Part Number: IXGT64N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGT64N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 222
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.0
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions and dimensions.
120
110
100
160
140
120
100
90
80
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60
50
40
30
20
10
80
60
40
20
0
20
5
Switching Times vs. Collector Current
Switching Times vs. Gate Resistance
t
T
V
t
R
V
r
J
r
CE
10
G
CE
30
= 125ºC, V
= 3Ω , V
= 480V
= 480V
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
15
40
GE
t
t
d(on)
d(on)
GE
20
= 15V
I
= 15V
I
50
C
C
R
- - - -
- - - -
= 50A
- Amperes
G
T
25
- Ohms
J
= 25ºC, 125ºC
60
I
C
30
= 100A
70
35
80
40
45
90
50
100
140
120
100
80
60
40
20
0
34
33
32
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30
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25
24
23
22
120
110
100
90
80
70
60
50
40
30
20
25
Switching Times vs. Junction Temperature
t
R
V
35
r
I
I
CE
G
C
C
= 3
= 100A
= 50A
= 480V
Ω
45
Fig. 19. Inductive Turn-on
, V
T
J
t
GE
d(on)
55
- Degrees Centigrade
= 15V
- - - -
65
75
85
95
IXGH64N60A3
IXGT64N60A3
IXYS REF: G_64N60A3(75) 7-02-08-B
105
115
125
40
38
36
34
32
30
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26
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22
20