IXGH20N100A3 IXYS, IXGH20N100A3 Datasheet - Page 3

• Manufacturer Part Number: IXGH20N100A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGH20N100A3

• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -

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6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
5
0.5
6
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
7
Fig. 5. Collector-to-Emitter Voltage
1
vs. Gate-to-Emitter Voltage
1
8
1.5
9
V
1.5
V
V
CE
CE
2
V
GE
GE
- Volts
- Volts
10
- Volts
= 15V
V
13V
11V
10V
9V
2.5
GE
I
2
C
= 15V
11
= 40A
13V
11V
10V
9V
20A
10A
3
12
2.5
J
J
= 125ºC
= 25ºC
3.5
13
T
8V
7V
6V
5V
J
= 25ºC
3
6V
5V
4
14
8V
7V
4.5
3.5
15
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
60
50
40
30
20
10
0
0
-50
3.5
0
Fig. 2. Extended Output Characteristics @ T
IXGA20N100A3 IXGP20N100A3
V
4.0
GE
-25
= 15V
4.5
5
Fig. 4. Dependence of V
5.0
0
Fig. 6. Input Admittance
Junction Temperature
5.5
10
T
J
25
- Degrees Centigrade
6.0
V
V
CE
GE
- Volts
6.5
15
50
- Volts
IXGH20N100A3
I
I
I
7.0
C
C
C
T
= 40A
= 10A
= 20A
J
75
V
= - 40ºC
CE(sat)
GE
7.5
20
125ºC
25ºC
= 15V
100
8.0
on
13V
8.5
J
25
11V
= 25ºC
125
10V
9.0
9V
8V
6V
5V
7V
150
9.5
30