IXGH20N100A3 IXYS, IXGH20N100A3 Datasheet - Page 4

• Manufacturer Part Number: IXGH20N100A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGH20N100A3

• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
28
24
20
16
12
45
40
35
30
25
20
15
10
0.00001
1
8
4
0
5
0
200
0
T
R
dv / dt < 10V / ns
J
G
= 125ºC
= 50Ω
300
10
Fig. 9. Reverse-Bias Safe Operating Area
400
20
Fig. 7. Transconductance
0.0001
500
30
I
C
V
- Amperes
CE
600
40
- Volts
700
50
Fig. 11. Maximum Transient Thermal Impedance
0.001
T
J
800
60
= - 40ºC
125ºC
25ºC
900
70
Pulse Width - Seconds
1000
80
0.01
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
f
V
I
I
IXGA20N100A3 IXGP20N100A3
= 1 MHz
C
G
CE
= 20A
= 10mA
= 500V
5
5
10
0.1
10
Fig. 10. Capacitance
C res
Fig. 8. Gate Charge
15
15
Q
G
C oes
- NanoCoulombs
V
CE
C ies
- Volts
20
20
IXGH20N100A3
25
25
1
30
30
35
35
10
40
40