IXGT32N100A3 IXYS, IXGT32N100A3 Datasheet
IXGT32N100A3
Manufacturer Part Number
IXGT32N100A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGT32N100A3.pdf
(2 pages)
Specifications of IXGT32N100A3
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
540
Eoff, Typ, Tj=125°c, Igbt, (mj)
13
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
GenX3
Ultra-low Vsat PT IGBTs
for up to 4 kHz switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
AS
CES
GES
J
JM
stg
L
CES
CGR
GES
GEM
C
SOLD
AS
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
T
I
V
V
T
I
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 0.8 • V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 )
TO-247
TO-268
C
C
C
TM
C
GE
C
CE
CE
C
J
C
C
J
C
GE
= 250μA, V
= 32A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C
= 25°C to 150°C
= 25°C, IGBT chip capability
= 110°C
≤ 150°C, tp < 300μs
= 0V, V
= 0V
= V
= 15V, T
= 25°C
= 25°C
1000V IGBT
CES
GE
GE
VJ
= 15V, Note 1
GE
CE
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 10Ω
T
T
Advance Technical Information
J
J
= 125°C
= 125°C
CES
IXGH32N100A3
IXGT32N100A3
-55 ... +150
-55 ... +150
Min.
Characteristic Values
I
1000
CM
1.13 / 10
3.0
Maximum Ratings
= 150
1000
± 20
± 30
1000
120
200
300
150
300
260
75
32
20
6
5
Typ.
1.90
2.05
±100 nA
Nm/lb.in.
Max.
5.0
50 μA
2.2
1 mA
°C
°C
°C
°C
°C
W
mJ
V
V
V
V
A
A
A
A
g
V
V
g
V
V
A
V
I
V
TO-247 (IXGH)
TO-268 ( IXGT)
G = Gate
E = Emitter
Features
•
•
•
•
•
Applications
•
•
C25
- drive simplicity
International standard packages
Low saturation voltage
Avalanche Rated
MOS gate turn-on
Epoxy molding meets UL 94V-O
Pulser circuits
Capacitor discharge
CES
CE(sat)
G
C
= 1000V
= 75A
≤ ≤ ≤ ≤ ≤ 2.2V
E
G
C = Collector
TAB = Collector
E
DS99958(02/08)
C (TAB)
C (TAB)
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IXGT32N100A3 Summary of contents
Page 1
... 0V ± 20V GES 32A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Advance Technical Information IXGH32N100A3 IXGT32N100A3 Maximum Ratings 1000 1000 ± 20 ± 200 20 120 = 10Ω 150 CM CES 300 -55 ... +150 150 -55 ... +150 ...
Page 2
... B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXGH32N100A3 IXGT32N100A3 TO-247 (IXGH) Outline ∅ Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 ...