IXGT32N100A3 IXYS, IXGT32N100A3 Datasheet - Page 2

• Manufacturer Part Number: IXGT32N100A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGT32N100A3

• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 540
• Eoff, Typ, Tj=125°c, Igbt, (mj): 13
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
ri
fi
ri
fi
d(on)
d(off)
d(on)
d(off)
fs
on
off
on
off
ies
oes
res
thJC
thCS
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C unless otherwise specified)
I
V
I
TO-247
Inductive Load, T
I
V
Inductive Load, T
I
V
C
C
C
C
CE
= 32A, V
= 32A, V
CE
CE
= 32A, V
= 32A, V
Test Conditions
= 25V, V
= 800V, R
= 800V, R
ADVANCE TECHNICAL INFORMATION
CE
GE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 10Ω
= 10Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
14
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2250
0.21
385
400
770
130
2.6
540
4.2
13
20
48
87
16
35
24
51
9.5
52
23
0.42 °C/W
Max.
700
800
14
6,404,065 B1
6,534,343
6,583,505
°C/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
mJ
ns
ns
ns
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2
6,710,463
TO-247 (IXGH) Outline
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
6,759,692
6,771,478 B2 7,071,537
1
2
1
2
20.80
15.75
19.81
3 - Emitter
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
IXGH32N100A3
IXGT32N100A3
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2 7,157,338B2
7,063,975 B2
21.46
16.26
20.32
BSC
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216