MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 4
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MIEB100W1200TEH
Manufacturer Part Number
MIEB100W1200TEH
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet
1.MIEB100W1200TEH.pdf
(8 pages)
Specifications of MIEB100W1200TEH
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.20
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Circuit Diagram
Outline Drawing
Product Marking
19
20
NTC
33, 34, 35
30, 31, 32
1
2
3
4
Ordering
Standard
T1
T2
D1
D2
27
28
29
MIEB100W1200TEH
5
7
8
6
Part Name
T3
T4
D3
D4
24
25
26
10
11
12
9
Marking on Product
MIEB100W1200TEH
T5
T6
16, 17, 18
13, 14, 15
D5
D6
21
22
23
Delivering Mode Base Qty Ordering Code
Box
MIEB100W1200TEH
Dimensions in mm (1 mm = 0.0394“)
Logo
5
Part number
1200 = Reverse Voltage [V]
100 = Current Rating [A]
EH = E3-Pack
W = Six-Pack
M = Module
E = NPT
B = 2nd Generation
T = NTC
I = IGBT
Part name
XXX XX-XXXXX
510118
Date Code
YYCWx
Prod.Index
20101111d
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