MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 7

• Manufacturer Part Number: MIEB100W1200TEH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB100W1200TEH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.20
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
Diode D1 - D6 & NTC
I
I
F
rr
300
250
200
150
100
150
100
50
50
0
0
0.0
0
Fig. 11 Typ. reverse recovery characteristics
Fig. 9 Typ. forward characteristics
I
rr
25
0.5
50
1.0
75
1.5
V
F
100 125 150 175 200 225
I
[V]
F
2.0
T
[A]
VJ
= 25°C
2.5
R
V
T
3.0
T
r
VJ
g
VJ
=
=
= 125°C
= 125°C
600 V
3.5
10 Ω
Q
rr
4.0
30
25
20
15
10
5
0
[µC]
Q
rr
[Ω]
R
[K/W]
[A]
Z
I
100000
rr
thJC
10000
1000
100
250
200
150
100
0.5
0.4
0.3
0.2
0.1
0.0
10
50
0
1000
0.1
0
Fig.13 Typ. NTC resistance vs. temperature
Fig. 10 Typ. reverse recovery characteristics
0.003 0.00001 0.015 0.0005
0.010 0.0014 0.004 0.006
0.057 0.021
0.130 0.1
Fig. 12 Typ. transient thermal impedance
R
i
I
V
T
I
33 Ω
F
rr
VJ
IGBT
r
=
=
25
= 125°C
t
1
600 V
i
100 A
1500
0.09 0.025
0.255 0.125
50
R
22 Ω
i
MIEB100W1200TEH
FRD
di
10
F
T
t
/dt [A/µs]
t
C
2000
p
i
75
[°C]
[ms]
100
100
10 Ω
2500
1000
125
Diode
IGBT
t
rr
3.3
10000
Ω
3000
150
500
400
300
200
100
0
20101111d
[ns]
7 - 8
t
rr