MIEB101H1200EH IXYS, MIEB101H1200EH Datasheet - Page 4

no-image

MIEB101H1200EH

Manufacturer Part Number
MIEB101H1200EH
Description
Full Bridge IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet

Specifications of MIEB101H1200EH

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.2
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Rthjc, Max, Diode, (k/w)
0.4
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Circuit Diagram
Outline Drawing
Product Marking
Ordering
Standard
13, 21
14, 20
1
2
3
4
MIEB101H1200EH
Part Name
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
T3
T1
D1
D3
10
11
12
9
Marking on Product
MIEB101H1200EH
T2
T4
D4
D2
19
15
Delivering Mode Base Qty Ordering Code
Box
Logo
Dimensions in mm (1 mm = 0.0394“)
MIEB 101H1200EH
5
Part name
XXX XX-XXXXX
Part number
1200 = Reverse Voltage [V]
101 = Current Rating [A]
2D Data Matrix
FOSS-ID 6 digits
EH = E3-Pack
M = Module
H = H~ Bridge
E = SPT
B = 2nd Generation
I = IGBT
510534
Date Code
YYCWx
Prod.Index
20110615a
4 - 8

Related parts for MIEB101H1200EH