MIEB101H1200EH IXYS, MIEB101H1200EH Datasheet - Page 5

• Manufacturer Part Number: MIEB101H1200EH
• Description: Full Bridge IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101H1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Rthjc, Max, Diode, (k/w): 0.4
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Transistor T1 - T4
C
C
E
300
250
200
150
100
250
200
150
100
50
50
30
25
20
15
10
0
0
5
0
0
5
Fig. 3 Typ. transfer characteristics
0
Fig. 1 Typ. output characteristics
Fig. 5 Typ. turn-on energy & switching times
E
V
on
R
V
V
T
20 40 60 80 100 120 140 160 180 200
GE
CE
GE
VJ
G
6
= 15 V
=
= 125°C
= 600 V
= ±15 V
versus collector current
1
10 Ω
T
T
7
VJ
VJ
= 25°C
= 125°C
8
2
V
V
CE
GE
I
C
9
E
[V]
[A]
[V]
rec(off)
T
VJ
T
3
VJ
= 125°C
10
= 25°C
11
4
12
t
d(on)
t
r
13
5
150
125
100
75
50
25
0
[ns]
t
V
[V]
[mJ]
[A]
GE
I
E
C
300
250
200
150
100
50
20
15
10
24
20
16
12
0
5
0
8
4
0
0
0
0
Fig. 6 Typ. turn-off energy & switching times
Fig. 4 Typ. turn-on gate charge
Fig. 2 Typ. output characteristics
E
I
V
T
C
off
CE
VJ
20 40 60 80 100 120 140 160 180 200
= 125°C
= 100 A
= 600 V
versus collector current
200
1
V
400
R
V
V
T
MIEB 101H1200EH
GE
2
Q
VJ
CE
GE
G
= 15 V
V
I
G
=
C
= 125°C
CE
= 600 V
= ±15 V
17 V
19 V
[nC]
[A]
10 Ω
[V]
600
3
800
4
13 V
11 V
t
9 V
t
d(off)
f
1000
5
600
500
400
300
200
100
0
20110615a
[ns]
5 - 8
t