DPG80C400HB IXYS, DPG80C400HB Datasheet

no-image

DPG80C400HB

Manufacturer Part Number
DPG80C400HB
Description
Manufacturer
IXYS
Datasheet
1.DPG80C400HB.pdf (4 pages)

Specifications of DPG80C400HB

Vrrm, (v)
400
Ifavm, D = 0.5, Total, (a)
80
Ifavm, D = 0.5, Per Diode, (a)
40
@ Tc, (°c)
135
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
400
Vf, Max, Tvj =150°c, (v)
1.14
@ If, (a)
40
Trr, Typ, Tvj =25°c, (ns)
45
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Package Style
TO-247AD
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 80 C 400 HB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
rr
F
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
J
2008 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
200
40
Data according to IEC 60747and per diode unless otherwise specified
400
400
=
40
80
40
80
1
A;
V;
V
V
A
A
A
A
200
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
2
100
0.5
V
3
T
T
T
T
T
T
T
T
T
T
T
T =
T
T =
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 135°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
DPG 80 C 400 HB
● Housing:
V
I
t
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
TO-247
2x
typ.
400
tbd
tbd
46
45
Backside: cathode
40
45 ns
4
max.
preliminary
1.43
1.77
1.14
1.51
0.79
0.70
V
A
400
175
215
400
0.4
7.1
40
1
20081020
Unit
K/W
m
mA
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A

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DPG80C400HB Summary of contents

Page 1

... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2008 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... DPG 80 C 400 HB Standard IXYS reserves the right to change limits, conditions and dimensions. 2008 IXYS all rights reserved © Conditions 1) per pin Part Name Marking on Product DPG80C400HB Data according to IEC 60747and per diode unless otherwise specified DPG 80 C 400 HB Ratings min. typ. 0.25 -55 0.8 20 ...

Page 3

... Outlines TO-247 Symbol Ø ØP1 IXYS reserves the right to change limits, conditions and dimensions. 2008 IXYS all rights reserved © Inches Millimeters min max min max 0.185 0.209 4.70 5.30 0.087 0.102 2.21 2.59 0.059 0.098 1.50 2.49 0.819 ...

Page 4

... IXYS reserves the right to change limits, conditions and dimensions. 2008 IXYS all rights reserved © DPG 80 C 400 HB Data according to IEC 60747and per diode unless otherwise specified preliminary 20081020 ...

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