DPG80C400HB IXYS, DPG80C400HB Datasheet - Page 2

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DPG80C400HB

Manufacturer Part Number
DPG80C400HB
Description
Manufacturer
IXYS
Datasheet

Specifications of DPG80C400HB

Vrrm, (v)
400
Ifavm, D = 0.5, Total, (a)
80
Ifavm, D = 0.5, Per Diode, (a)
40
@ Tc, (°c)
135
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
400
Vf, Max, Tvj =150°c, (v)
1.14
@ If, (a)
40
Trr, Typ, Tvj =25°c, (ns)
45
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Package Style
TO-247AD
Symbol
I
R
T
Weight
M
F
1)
IXYS reserves the right to change limits, conditions and dimensions.
©
RMS
C
stg
thCH
D
I
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
2008 IXYS all rights reserved
RMS
Marking on product
is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
Assembly Code
DateCode
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Logo
Standard
Ordering
Product Marking
XXXXXX
YYWW
abcdef
DPG 80 C 400 HB
Part Name
Conditions
per pin
Marking on Product
DPG80C400HB
Data according to IEC 60747and per diode unless otherwise specified
1)
Delivering Mode
Tube
Part number
400
HB
Base Qty Code Key
80
D
G
C
P
DPG 80 C 400 HB
=
=
=
=
=
=
=
30
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
506875
min.
-55
0.8
20
Ratings
typ.
0.25
6
max.
preliminary
150
120
1.2
70
20081020
Unit
K/W
Nm
°C
N
A
g

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