DNA30E2200FE IXYS, DNA30E2200FE Datasheet

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DNA30E2200FE

Manufacturer Part Number
DNA30E2200FE
Description
Rectifier (Standard) Diodes
Manufacturer
IXYS
Datasheet

Specifications of DNA30E2200FE

Vrrm, (v)
2200
Ifavm, Total, (a)
30
Ifavm, Per Diode, (a)
30
@ Tc, (°c)
105
Prsm, (kw)
-
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj = 45°c, (a)
370
Vt0, (v)
0.88
Rt, (mohms)
12.2
Tvjm, (°c)
175
Rthjc, Max, (k/w)
1.35
Rthch, (k/w)
0.20
Package Style
i4-pac
High Voltage Standard Rectifier
Single Diode
Part number
DNA 30 E 2200 FE
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
V
V
r
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
I
I
R
Features / Advantages:
R
FAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
● Diode for main rectification
● For single and three phase
rectangular
Applications:
Conditions
V =
V =
I =
I =
I =
I =
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
bridge configurations
2200
2200
700
30
60
30
60
Data according to IEC 60747and per diode unless otherwise specified
5
A
A
A
A
V
V
V; f = 1 MHz
d =
0.5
1
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
150
150
105
175
150
150
DNA 30 E 2200 FE
45
45
● Housing:
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
FAV
RRM
F
min.
=
=
=
-55
R a t i n g s
i4-Pac
2200
typ.
1.25 V
30
7
Backside: anode
max.
2200
1.27
1.50
1.25
1.59
0.83
12.2
1.35
V
A
175
110
370
400
315
340
685
665
495
480
1.5
40
30
20110822a
Unit
K/W
mΩ
mA
A²s
A²s
A²s
A²s
µA
pF
°C
W
V
V
V
V
V
A
V
A
A
A
A

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DNA30E2200FE Summary of contents

Page 1

... FSM I²t value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 5 1 Applications: ● Diode for main rectification ● For single and three phase bridge configurations ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Conditions per terminal second minute terminal to terminal terminal to backside Marking on Product DNA30E2200FE Similar Part Package DNA30E2200PA TO-220AC (2) DNA30E2200PC TO-263AB (D2Pak) DNA30EM2200PC TO-263AB (D2Pak) Data according to IEC 60747and per diode unless otherwise specified ...

Page 3

... Outlines i4-Pac IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified DNA 30 E 2200 FE Millimeter Inches Dim. min max min A 4.83 5.21 0.190 A1 2.59 3.00 0.102 A2 1 ...

Page 4

... Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180° 1.4 1.2 1.0 Z thJC 0.8 [K/W] 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 400 300 I FSM 200 [A] 100 0 2.5 0.001 0.01 0.1 t [s] Fig ...

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