DNA30E2200FE IXYS, DNA30E2200FE Datasheet - Page 3

• Manufacturer Part Number: DNA30E2200FE
• Description: Rectifier (Standard) Diodes
• Manufacturer: IXYS

Specifications of DNA30E2200FE

• Vrrm, (v): 2200
• Ifavm, Total, (a): 30
• Ifavm, Per Diode, (a): 30
• @ Tc, (°c): 105
• Prsm, (kw): -
• Ifrms, (a): 70
• Ifsm, 10 Ms, Tvj = 45°c, (a): 370
• Vt0, (v): 0.88
• Rt, (mohms): 12.2
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 1.35
• Rthch, (k/w): 0.20
• Package Style: i4-pac

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Outlines i4-Pac
1
E
5
W
A2
A
A1
c
Data according to IEC 60747and per diode unless otherwise specified
E1
e
2x b2
2x b
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
Dim.
D1
D2
D3
A1
A2
b2
E1
L1
DNA 30 E 2200 FE
W
D
Q
R
A
b
E
e
L
c
20.80
14.99
20.30
19.56
16.76
19.81
4.83
2.59
1.17
1.14
1.47
0.51
1.65
2.11
5.33
2.54
min
15.24 BSC
Millimeter
-
21.34
15.75
20.70
20.29
17.53
21.34
max
5.21
3.00
2.16
1.40
1.73
0.74
2.03
2.59
6.20
4.57
0.10
0.190
0.102
0.046
0.045
0.058
0.020
0.819
0.590
0.065
0.799
0.770
0.660
0.780
0.083
0.210
0.100
min
0.600 BSC
-
Inches
0.205
0.118
0.085
0.055
0.068
0.029
0.840
0.620
0.080
0.815
0.799
0.690
0.840
0.102
0.244
0.180
0.004
max
20110822a