CM400E4G-130H Powerex Inc, CM400E4G-130H Datasheet - Page 6
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CM400E4G-130H
Manufacturer Part Number
CM400E4G-130H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM400E4G-130H.pdf
(8 pages)
Specifications of CM400E4G-130H
Prx Availability
RequestQuote
Voltage
6500V
Current
400A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
3
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1000
7
6
5
4
3
2
1
0
HALF-BRIDGE SWITCHING ENERGY
CAPACITANCE CHARACTERISTICS
100
0
10
1
0
V
R
L
Inductive load
CHARACTERISTICS (TYPICAL)
0.1
S
CC
G(on)
= 170nH, Tj = 125°C
= 3600V, V
= 15Ω, R
200
V
f = 100kHz
GE
Collector-Emitter Voltage [V]
= 0V, Tj = 25°C
GE
Collector Current [A]
G(off)
= ±15V
(TYPICAL)
= 50Ω
400
1
600
10
800
Erec
Eon
Eoff
Coes
Cres
Cies
1000
100
-10
-15
8
7
6
5
4
3
2
1
0
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CC
GE
V
Tj = 25°C
= ±15V, L
CE
= 3600V, I
= 3600V, I
20
2
S
C
= 170nH
Gate resistor [Ohm]
= 400A
C
= 400A
(TYPICAL)
Gate Charge [µC]
Eon
40
CM400E2G-130H
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
4
Erec
60
6
HVM-1049-B
INSULATED TYPE
80
8
Eoff
100
6 of 8
1
0