CM400E4G-130H Powerex Inc, CM400E4G-130H Datasheet - Page 7
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CM400E4G-130H
Manufacturer Part Number
CM400E4G-130H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM400E4G-130H.pdf
(8 pages)
Specifications of CM400E4G-130H
Prx Availability
RequestQuote
Voltage
6500V
Current
400A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
3
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
0.01
1.2
0.8
0.6
0.4
0.2
100
0.1
TRANSIENT THERMAL IMPEDANCE
10
1
0
0.001
1
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
V
R
L
Inductive load
Rth(j-c)Q = 21.0K/kW
Rth(j-c)R = 33.0K/kW
S
CC
G(on)
= 170nH, Tj = 125°C
= 3600V, V
= 15Ω, R
CHARACTERISTICS
0.01
Collector Current [A]
GE
G(off)
= ±15V
= 50Ω
Time [s]
tf
tr
0.1
100
1
td(off)
td(on)
1000
10
Z
R
τ
i
i
[sec] :
FREE-WHEEL DIODE REVERSE RECOVERY
[K/kW] :
th
j (
100
0.1
−
10
) c
1
(
10
) t
CHARACTERISTICS (TYPICAL)
V
R
Tj = 125°C, Inductive load
=
CC
G(on)
∑
= 3600V, V
i
=
n
= 15Ω, L
1
0.0096
0.0001
1
R
i
Emitter Current [A]
⎧
⎪
⎨
⎪ ⎩
S
GE
1
= 170nH
= ±15V
−
CM400E2G-130H
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
exp
0.1893
0.0058
2
100
⎛
⎜
⎜
⎝
−
τ
t
HVM-1049-B
i
⎞
⎟
⎟
⎠
⎫
⎪
⎬
⎪ ⎭
3
0.4044
0.0602
INSULATED TYPE
Irr
trr
1000
0.3967
0.3512
4
7 of 8
10000
1000
100
10