FDMF6705B Fairchild Semiconductor, FDMF6705B Datasheet - Page 12

• Manufacturer Part Number: FDMF6705B
• Manufacturer: Fairchild Semiconductor

© 2011 Fairchild Semiconductor Corporation
FDMF6705B • Rev. 1.0.2
Functional Description
The FDMF6705B is a driver-plus-FET module optimized
for the synchronous buck converter topology. A single
PWM input signal is all that is required to properly drive
the high-side and the low-side MOSFETs. Each part is
capable of driving speeds up to 1MHz.
VCIN and Disable
The VCIN pin is monitored by an Under-Voltage Lockout
(UVLO) circuit. When V
is enabled. When V
disabled (GH, GL=0). The driver can also be disabled by
pulling the DISB# pin LOW (DISB# < V
holds both GL and GH LOW regardless of the PWM
input state. The driver can be enabled by raising the
DISB# pin voltage HIGH (DISB# > V
Table 1.
Note:
3.
Thermal Warning Flag
The FDMF6705B provides a thermal warning flag
(THWN) to warn of over-temperature conditions. The
thermal warning flag uses an open-drain output that
pulls to CGND when the activation temperature (150°C)
is reached. The THWN output returns to a high-
impedance state once the temperature falls to the reset
temperature (135°C). The THWN output requires a pull-
up resistor, which can be connected to VCIN. THWN
does NOT disable the DrMOS module.
UVLO
THWN
Logic
State
0
1
1
1
DISB# internal pull-down current source is 10µA.
DISB#
HIGH
LOW
Open
UVLO and Disable Logic
Figure 25. THWN Operation
X
0
1
Normal
Operation
CIN
T
135°C
Reset
CIN
J_driverIC
falls below ~2.7V, the driver is
Enabled (See Table 2)
rises above ~3.1V, the driver
Disabled (GH, GL=0)
Disabled (GH, GL=0)
Disabled (GH, GL=0)
Driver State
150°C
Activation
Temperature
IH_DISB
).
Thermal
Warning
IL_DISB
), which
12
3-State PWM Input
The FDMF6705B incorporates a three-state PWM input
gate drive design. The three-state gate drive has both
logic HIGH level and LOW level, along with a three-state
shutdown window. When the PWM input signal enters
and remains within the three-state window for a defined
hold-off time (t
LOW. This feature enables the gate drive to shut down
both high-and low-side MOSFETs to support features
such as phase shedding, which is a common feature on
multiphase voltage regulators.
Operation when Exiting Three-State
Condition
When
FDMF6705B design follows the PWM input command. If
the PWM input goes from three-state to LOW, the low-
side MOSFET is turned on. If the PWM input goes from
three-state to HIGH, the high-side MOSFET is turned
on. This is illustrated in Figure 26. The FDMF6705B
design allows for short propagation delays when exiting
the three-state window (see Electrical Characteristics).
Low-Side Driver
The low-side driver (GL) is designed to drive a ground-
referenced low R
for GL is internally connected between VDRV and
CGND. When the driver is enabled, the driver's output is
180° out of phase with the PWM input. When the driver
is disabled (DISB#=0V), GL is held LOW.
High-Side Driver
The high-side driver is designed to drive a floating N-
channel MOSFET. The bias voltage for the high-side
driver is developed by a bootstrap supply circuit,
consisting of the internal Schottky diode and external
bootstrap capacitor (C
held at PGND, allowing C
through the internal diode. When the PWM input goes
HIGH, GH begins to charge the gate of the high-side
MOSFET (Q1). During this transition, the charge is
removed from C
Q1 turns on, V
V
for Q1. To complete the switching cycle, Q1 is turned off
by pulling GH to VSWH. C
VDRV when VSWH falls to PGND. GH output is in-
phase with the PWM input. The high-side gate is held
LOW when the driver is disabled or the PWM signal is
held within the three-state window for longer than the
three-state hold-off time, t
IN
+ V
BOOT
exiting
, which provides sufficient V
SWH
D_HOLD-OFF
BOOT
a
DS(ON)
rises to V
valid
and delivered to the gate of Q1. As
BOOT
N-channel MOSFET. The bias
), both GL and GH are pulled
D_HOLD-OFF
). During startup, VSWH is
three-state
BOOT
IN
BOOT
, forcing the BOOT pin to
is then recharged to
to charge to VDRV
.
GS
condition,
enhancement
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the