FDMF6705B Fairchild Semiconductor, FDMF6705B Datasheet - Page 4

• Manufacturer Part Number: FDMF6705B
• Manufacturer: Fairchild Semiconductor

© 2011 Fairchild Semiconductor Corporation
FDMF6705B • Rev. 1.0.2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1.
Recommended Operating Conditions
The Recommended Operating
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Note:
2.
Symbol
Symbol
V
V
V
I
V
V
V
V
θ
V
V
THWN#
I
V
T
ESD
V
V
SMOD#
THWN#
V
V
O(AV)
V
V
DISB#
BOOT
BOOT
JPCB
T
PWM
T
SWH
DRV
DRV
PHS
STG
CIN
CIN
I
by the peak DrMOS temperature, T
rating can be changed with different application settings.
Operating at high V
during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must
remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application
Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.
GH
GL
IN
IN
O(AV)
A
J
is rated using Fairchild’s DrMOS evaluation board, T
Control Circuit Supply Voltage
Gate Drive Circuit Supply Voltage
Output Stage Supply Voltage
Supply Voltage
Drive Voltage
Output Disable
PWM Signal Input
Skip Mode Input
Low Gate Manufacturing Test Pin
Thermal Warning Flag
Power Input
Bootstrap Supply
High Gate Manufacturing Test Pin
PHASE
Switch Node Input
Bootstrap Supply
THWN# Sink Current
Output Current
Junction-to-PCB Thermal Resistance
Ambient Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Electrostatic Discharge Protection
IN
(1)
can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes
C
onditions table defines the conditions for actual device operation. Recommended
Parameter
J
= 150°C, and varies depending on operating conditions and PCB layout. This
Parameter
Referenced to CGND
Referenced to CGND
Referenced to CGND
Referenced to CGND
Referenced to CGND
Referenced to CGND
Referenced to CGND
Referenced to PGND, CGND
Referenced to VSWH, PHASE
Referenced to CGND
Referenced to VSWH, PHASE
Referenced to CGND
Referenced to CGND
Referenced to PGND, CGND (DC Only)
Referenced to PGND, <20ns
Referenced to VDRV
Referenced to VDRV, <20ns
f
f
Human Body Model, JESD22-A114
Charged Device Model, JESD22-C101
SW
SW
=300kHz, V
=1MHz, V
4
A
IN
= 25°C, natural convection cooling. This rating is limited
=19V, V
IN
=19V, V
O
=1.0V
O
=1.0V
Min.
4.5
4.5
3.0
Typ.
12.0
5.0
5.0
Min.
1000
2000
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-8.0
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.1
-40
-55
24.0
Max.
Max.
+125
+150
+150
5.5
5.5
30.0
30.0
30.0
30.0
30.0
33.0
22.0
25.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
7.0
3.5
38
35
(2)
www.fairchildsemi.com
°C/W
Unit
Unit
mA
°C
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
V
V
V
V