FDMF6706B Fairchild Semiconductor, FDMF6706B Datasheet

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FDMF6706B

Manufacturer Part Number
FDMF6706B
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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© 2011 Fairchild Semiconductor Corporation
FDMF6706B • Rev. 1.0.1
FDMF6706B - Extra-Small, High-Performance, High-
Frequency DrMOS Module
Benefits
Features
Ordering Information
Part Number
FDMF6706B
Ultra-Compact 6x6mm PQFN, 72% Space-Saving
Compared to Conventional Discrete Solutions
Fully Optimized System Efficiency
Clean Switching Waveforms with Minimal Ringing
High-Current Handling
Over 93% Peak-Efficiency
High-Current Handling of 45A
High-Performance PQFN Copper-Clip Package
3-State 3.3V PWM Input Driver
Skip-Mode SMOD# (Low-Side Gate Turn Off) Input
Thermal Warning Flag for Over-Temperature
Condition
Driver Output Disable Function (DISB# Pin)
Internal Pull-Up and Pull-Down for SMOD# and
DISB# Inputs, Respectively
Fairchild PowerTrench
Clean Voltage Waveforms and Reduced Ringing
Fairchild SyncFET™ (Integrated Schottky Diode)
Technology in the Low-Side MOSFET
Integrated Bootstrap Schottky Diode
Adaptive Gate Drive Timing for Shoot-Through
Protection
Under-Voltage Lockout (UVLO)
Optimized for Switching Frequencies up to 1MHz
Low-Profile SMD Package
Fairchild Green Packaging and RoHS Compliance
Based on the Intel® 4.0 DrMOS Standard
Current Rating
45A
®
Technology MOSFETs for
40-Lead, Clipbond PQFN DrMOS, 6.0mm x 6.0mm Package
Description
The XS™ DrMOS family is Fairchild’s next-generation,
fully optimized, ultra-compact, integrated MOSFET plus
driver power stage solution for high-current, high-
frequency, synchronous buck DC-DC applications. The
FDMF6706B integrates a driver IC, two power MOSFETs,
and a bootstrap Schottky diode into a thermally
enhanced, ultra-compact 6x6mm PQFN package.
With an integrated approach, the complete switching
power stage is optimized for driver and MOSFET
dynamic performance, system inductance, and power
MOSFET R
performance
which dramatically reduces switch ringing, eliminating
the snubber circuit in most buck converter applications.
A new driver IC with reduced dead times and
propagation delays further enhances performance. A
thermal warning function warns of potential over-
temperature situations. FDMF6706B also incorporates
features such as Skip Mode (SMOD) for improved light-
load efficiency, along with a Three-state 3.3V PWM
input for compatibility with a wide range of PWM
controllers.
Applications
High-Performance Gaming Motherboards
Compact Blade Servers, V-Core and Non-V-Core
DC-DC Converters
Desktop Computers, V-Core and Non-V-Core
DC-DC Converters
Workstations
High-Current DC-DC Point-of-Load (POL)
Converters
Networking and Telecom Microprocessor Voltage
Regulators
Small Form-Factor Voltage Regulator Modules
Package
DS(ON)
PowerTrench
. XS™ DrMOS uses Fairchild's high-
®
MOSFET
March 2012
FDMF6706B
www.fairchildsemi.com
Top Mark
technology,

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FDMF6706B Summary of contents

Page 1

... MOSFET plus driver power stage solution for high-current, high- frequency, synchronous buck DC-DC applications. The FDMF6706B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6mm PQFN package. With an integrated approach, the complete switching ...

Page 2

... VCIN DISB# 10µA V CIN R UP_PWM Input PWM 3- State Logic R DN_PWM THWN# Temp. Sense CGND © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 VDRV VCIN VIN R BOOT DISB# BOOT PWM FDMF6706B PHASE SMOD# VSWH THWN# PGND CGND Figure 1. Typical Application Circuit VDRV ...

Page 3

... LOW). This pin has a 10µA internal pull-down current source. Do not add a noise filter capacitor. 40 PWM PWM signal input. This pin accepts a Three-state 3.3V PWM signal from the controller. © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 Figure 4. Top View Description 3 www.fairchildsemi.com ...

Page 4

... Control Circuit Supply Voltage CIN V Gate Drive Circuit Supply Voltage DRV V Output Stage Supply Voltage IN Note: © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 Parameter Referenced to CGND Referenced to CGND Referenced to CGND Referenced to CGND Referenced to CGND Referenced to CGND Referenced to CGND Referenced to PGND, CGND ...

Page 5

... MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application Information” and “PCB Layout Guidelines” sections of this datasheet for additional information. © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 5 www.fairchildsemi.com ...

Page 6

... High-Level Input Voltage IH_SMOD V Low-Level Input Voltage IL_SMOD I Pull-Up Current PLU t Propagation Delay PD_SLGLL t Propagation Delay PD_SHGLH © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0 5V, and T = +25°C unless otherwise noted. CIN DRV A Condition PWM=LOW or HIGH or Float Q VCIN VDRV ...

Page 7

... Exiting 3-State Propagation t PD_TSGLH Delay Boot Diode V Forward-Voltage Drop F V Breakdown Voltage R © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0 5V, and T = +25°C unless otherwise noted. CIN DRV A Condition I =5mA PLD SW=0V, Delay Between GH from HIGH to LOW and GL from LOW to HIGH ...

Page 8

... V IH_PWM PWM VSWH VSWH t PD PHGLL t D_DEADON © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 90% 1.0V 10 PLGHL Figure 5. PWM Timing Diagram 8 V IL_PWM 10% 90% 1.2V t D_TIMEOUT ( 250ns Timeout) 2.2V t D_DEADOFF www.fairchildsemi.com ...

Page 9

... Module Switching Frequency, f Figure 8. Power Loss vs. Switching Frequency 1. 12V 30A OUT 1.10 1.05 1.00 0.95 0.90 4.50 4.75 Driver Supply Voltage, V Figure 10. Power Loss vs. Driver Supply Voltage © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 =1.0V, V =5V, V =5V, L =320nH, T CIN DRV OUT 1MHz ...

Page 10

... Driver Supply Current vs. Driver Supply Voltage 3 25°C A 2.5 V IH_PWM 2.0 V TRI_HI 1.5 1.0 0.5 0.0 4.50 4.75 5.00 Driver Supply Voltage, V Figure 16. PWM Thresholds vs. Driver Supply Voltage © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 (Continued) =1.0V, V =5V, V =5V, L =320nH, T CIN DRV OUT 42 = 30A 300kHz ...

Page 11

... CIN -9.5 -10.0 -10.5 -11.0 -11.5 -12.0 -50 - Driver IC Junction Temperature, T Figure 20. SMOD# Pull-Up Current vs. Temperature 2 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 4.50 4.75 Driver Supply Voltage, V Figure 22. Disable Thresholds vs. Temperature © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 (Continued) =1.0V, V =5V, V =5V, L =320nH, T CIN DRV OUT 2.0 1.9 1.8 1.7 1.6 1.5 V IL_SMOD 1.4 1.3 -50 5.25 5.50 (V) CIN Figure 19. 2.00 1.90 1.80 1.70 1.60 1.50 1. 100 ...

Page 12

... PWM input goes from three-state to LOW, the low- side MOSFET is turned on. If the PWM input goes from 3-state to HIGH, the high-side MOSFET is turned on, as Driver State illustrated in Figure 25. The FDMF6706B design allows for short propagation delays when exiting the three-state window (see Electrical Characteristics). Low-Side Driver ...

Page 13

... V PD_SHGLH GS IH_SMOD © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 To prevent overlap during the HIGH-to-LOW transition (Q1 off to Q2 on), the adaptive circuitry monitors the voltage at the VSWH pin. When the PWM signal goes LOW, Q1 turns off after a propagation delay (t Once the VSWH pin falls below ~2.2V, Q2 turns on after adaptive delay t monitored ...

Page 14

... VSWH GL 90% 1. PD_PLGHL PD_PHGLL t t D_DEADOFF D_DEADON © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 Table 2. DISB Note: 4. The SMOD feature is intended to have low propagation delay between the SMOD signal and the low-side FET V diode emulation on a cycle-by-cycle basis. ...

Page 15

... ON Open- Drain Output © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 VCIN Filter The VDRV pin provides power to the gate drive of the high-side and low-side power MOSFETs. In most cases, VDRV can be connected directly to VCIN, which supplies power to the logic circuitry of the gate driver. ...

Page 16

... DrMOS cooling acceptable noise emission output inductor should be located close to the FDMF6706B to minimize the power loss due to the VSWH copper trace. Care should also be taken so the inductor dissipation does not heat the DrMOS. ® 4. PowerTrench MOSFETs are used in the output stage ...

Page 17

... Top View © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 Figure 29. PCB Layout Example 17 Bottom View www.fairchildsemi.com ...

Page 18

... Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2011 Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 B PIN#1 INDICATOR 6. ...

Page 19

... Fairchild Semiconductor Corporation FDMF6706B • Rev. 1.0.1 19 www.fairchildsemi.com ...

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