FAN7371 Fairchild Semiconductor, FAN7371 Datasheet - Page 4

• Manufacturer Part Number: FAN7371
• Description: The FAN7371 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V
• Manufacturer: Fairchild Semiconductor

FAN7371 Rev. 1.0.2
© 2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T
Notes:
2
3
4
5
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Symbol
dV
This IC contains a shunt regulator on V
supply pin should not be driven by a low-impedance voltage source greater than the V
Electrical Characteristics section
Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
Do not exceed power dissipation (P
T
V
V
V
V
V
V
V
θ
V
V
V
P
T
T
STG
HO
DD
HO
DD
BS
S
JA
IN
IN
D
A
S
S
B
J
/dt
High-Side Floating Supply Voltage
High-Side Floating Supply Offset Voltage
High-Side Output Voltage
Logic Input Voltage
Supply Voltage
High-Side Floating Offset Voltage
High-Side Floating Supply Voltage
High-Side Floating Output Voltage
Low-Side and Logic Supply Voltage
Logic Input Voltage
Allowable Offset Voltage Slew Rate
Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
Operating Ambient Temperature
Characteristics
(3, 4, 5)
Parameter
D
) under any circumstances.
DD
and V
A
=25°C unless otherwise specified.
(2)
BS
(2)
with a normal breakdown voltage of 25V. Please note that this
4
V
B
V
6-V
V
Min.
GND
-V
Min.
S
-0.3
-0.3
-0.3
S
V
-55
-55
-40
10
+10
SHUNT
-0.3
S
DD
V
V
V
V
V
Max.
625.0
DD
0.625
Max.
+150
+150
+125
SHUNT
± 50
B
B
V
200
600
S
V
20
SHUNT
+0.3
+0.3
+20
DD
+0.3
B
specified in the
www.fairchildsemi.com
°C/W
Unit
Unit
V/ns
°C
°C
°C
W
V
V
V
V
V
V
V
V
V
V