FAN7371 Fairchild Semiconductor, FAN7371 Datasheet - Page 5

• Manufacturer Part Number: FAN7371
• Description: The FAN7371 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V
• Manufacturer: Fairchild Semiconductor

FAN7371 Rev. 1.0.2
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics
V
The V
Note:
6
Dynamic Electrical Characteristics
V
.
POWER SUPPLY SECTION
BOOTSTRAPPED SUPPLY SECTION
SHUNT REGULATOR SECTION
INPUT LOGIC SECTION
GATE DRIVER OUTPUT SECTION
Symbol
V
V
BIAS
V
DD
Symbol
V
I
I
BSUV+
BSHYS
I
SHUNT
I
V
BSUV-
V
QDD
V
I
R
PDD
QBS
V
I
I
I
PBS
V
I
IN+
=V
LK
IN-
O+
O-
OH
OL
t
t
IH
IN
IL
S
on
(V
off
t
t
These parameters guaranteed by design.
O
r
f
BS
DD
and I
=15V, GND=0V, C
, V
Quiescent V
Operating V
V
V
V
Offset Supply Leakage Current
Quiescent V
Operating V
V
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic Input High Bias Current
Logic Input Low Bias Current
Input Pull-down Resistance
High Level Output Voltage (V
Low Level Output Voltage
Output High, Short-Circuit Pulsed Current
Output Low, Short-Circuit Pulsed Current
Allowable Negative V
Threshold Voltage
Threshold Voltage
Hysteresis Voltage
Voltage
Signal Propagation to HO
BS
BS
BS
DD
O
BS
Turn-on Propagation Delay Time
Turn-off Propagation Delay Time
Turn-on Rise Time
Turn-off Fall Time
parameters are relative to V
Supply Under-Voltage Positive Going
Supply Under-Voltage Negative Going
Supply Under-Voltage Lockout
and V
)=15.0V, T
BS
DD
BS
DD
BS
Characteristics
Shunt Regulator Clamping
Supply Current
Supply Current
A
Supply Current
Supply Current
Parameter
LOAD
= 25°C, unless otherwise specified. The V
S
=1000pF, T
pin Voltage for IN
BIAS
S
A
and are applicable to the respective output HO.
=25°C, unless otherwise specified.
- V
O
)
(6)
(6)
V
V
V
f
V
V
V
V
V
C
I
V
V
No Load
No Load
V
V
S
S
Value
IN
SHUNT
=0V
=0V
IN
BS
BS
BS
B
IN
IN
IN
HO
HO
LOAD
5
=20KHz, No Load
=V
=0V or 5V
=0V or 5V
=5V
=0V
=Sweep
=Sweep
=Sweep
=0V, V
=15V,V
S
=1nF, f
=600V
=5mA
Conditions
Test Condition
IN
IN
=5V, PW ≤10µs
=0V, PW ≤10µs
IN
IN
=20KHz, rms
and I
IN
parameters are referenced to GND.
Min.
Min. Typ. Max. Unit
8.2
7.5
2.5
3.0
3.0
24
70
Typ.
150
150
25
15
-9.8
110
9.2
8.5
0.7
1.0
4.0
4.0
25
35
60
25
45
Max.
210
210
www.fairchildsemi.com
50
40
10.2
-7.0
100
120
9.5
2.8
0.8
1.2
70
10
70
30
2
Unit
mA
mV
KΩ
μA
μA
μA
μA
μA
μA
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
V