FGPF50N33BT Fairchild Semiconductor, FGPF50N33BT Datasheet - Page 3

• Manufacturer Part Number: FGPF50N33BT
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGPF50N33BT Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
0.0
25
0
T
Common Emitter
V
T
T
Common Emitter
V
C
GE
C
C
GE
Temperature at Variant Current Level
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
C
o
1
C
1.5
50
Case Temperature, T
20V
2
3.0
75
15V
3
12V
C
10V
I
C
V
[
50A
30A
o
= 20A
100
GE
4.5
C]
CE
CE
= 8V
4
[V]
[V]
125
6.0
5
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
160
120
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0.0
0
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
I
C
o
C
4
C
3
C
Gate-Emitter Voltage, V
30A
Gate-Emitter Voltage,V
= 20A
1.5
8
6
20V
50A
3.0
12
9
Common Emitter
T
C
V
GE
GE
15V
= 25
GE
4.5
CE
[V]
[V]
= 8V
o
16
12
[V]
C
10V
GE
12V
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6.0
20
15