FGPF50N33BT Fairchild Semiconductor, FGPF50N33BT Datasheet - Page 4
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FGPF50N33BT
Manufacturer Part Number
FGPF50N33BT
Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGPF50N33BT.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGPF50N33BT
Manufacturer:
F/C
Quantity:
148
Company:
Part Number:
FGPF50N33BTJDTU
Manufacturer:
LRC
Quantity:
3 122
FGPF50N33BT Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
15
12
20
16
12
10
9
6
3
0
8
4
0
1
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
o
I
10
C
C
4
Gate-Emitter Voltage, V
= 20A
10
Gate Resistance, R
t
t
r
d(on)
Gate Charge, Q
V
CC
20
8
= 100V
30A
20
Common Emitter
V
I
T
T
C
50A
CC
C
C
12
30
= 20A
g
= 25
= 125
= 200V, V
[nC]
Common Emitter
T
G
C
o
[ Ω ]
GE
C
o
= 125
200V
C
30
[V]
GE
40
16
GE
o
C
= 15V
40
50
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
4000
1000
1500
1000
0.01
Figure 12. Turn-off Characteristics vs.
100
500
500
100
0.1
10
10
0
1
0.1
0
1
Common Emitter
V
I
T
T
C
CC
C
C
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
= 20A
= 25
= 125
= 200V, V
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
Gate Resistance
10
C
o
C
Gate Resistance, R
1
GE
C
C
C
ies
res
oes
= 15V
20
10
30
Common Emitter
V
T
G
GE
C
[ Ω ]
10
= 25
t
= 0V, f = 1MHz
d(off)
t
CE
f
o
CE
C
[V]
40
[V]
100
100
DC
www.fairchildsemi.com
10
µ
s
µ
400
s
50
30