FGPF50N33BT Fairchild Semiconductor, FGPF50N33BT Datasheet - Page 4

• Manufacturer Part Number: FGPF50N33BT
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGPF50N33BT Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
15
12
20
16
12
10
9
6
3
0
8
4
0
1
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
o
I
10
C
C
4
Gate-Emitter Voltage, V
= 20A
10
Gate Resistance, R
t
t
r
d(on)
Gate Charge, Q
V
CC
20
8
= 100V
30A
20
Common Emitter
V
I
T
T
C
50A
CC
C
C
12
30
= 20A
g
= 25
= 125
= 200V, V
[nC]
Common Emitter
T
G
C
o
[ Ω ]
GE
C
o
= 125
200V
C
30
[V]
GE
40
16
GE
o
C
= 15V
40
50
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
4000
1000
1500
1000
0.01
Figure 12. Turn-off Characteristics vs.
100
500
500
100
0.1
10
10
0
1
0.1
0
1
Common Emitter
V
I
T
T
C
CC
C
C
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
= 20A
= 25
= 125
= 200V, V
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
Gate Resistance
10
C
o
C
Gate Resistance, R
1
GE
C
C
C
ies
res
oes
= 15V
20
10
30
Common Emitter
V
T
G
GE
C
[ Ω ]
10
= 25
t
= 0V, f = 1MHz
d(off)
t
CE
f
o
CE
C
[V]
40
[V]
100
100
DC
www.fairchildsemi.com
10
µ
s
µ
400
s
50
30