FGA90N33ATD Fairchild Semiconductor, FGA90N33ATD Datasheet - Page 4

• Manufacturer Part Number: FGA90N33ATD
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
C
o
1
C
50
15V
12V
1
20V
2
75
2
10V
3
I
C
90A
40A
= 20A
V
9V
GE
100
CE
8V
3
7V
CE
= 6V
[V]
4
[V]
C
[
o
C
]
125
4
5
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
160
120
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
40A
= 20V
I
C
Collector-Emitter Voltage, V
o
2
o
C
1
o
= 20A
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
10V
12V
15V
20V
4
2
8
90A
6
9V
3
12
Common Emitter
T
8V
8
C
GE
GE
V
= 25
7V
GE
CE
[V]
[V]
= 6V
o
4
[V]
16
C
10
GE
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5
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