FGA90N33ATD Fairchild Semiconductor, FGA90N33ATD Datasheet - Page 5

• Manufacturer Part Number: FGA90N33ATD
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
20
16
12
100
200
15
12
8
4
0
10
9
6
3
0
0
0
0
Common Emitter
T
Gate Resistance
C
I
= 25
C
= 20A
4
o
Gate-Emitter Voltage, V
20
20
C
t
Gate Resistance, R
t
r
d(on)
V
Gate Charge, Q
CC
= 100V
8
40
40
40A
90A
Common Emitter
V
I
T
T
12
C
CC
C
C
60
60
200V
= 20A
= 25
= 125
g
Common Emitter
T
= 200V, V
C
[nC]
G
GE
= 125
o
[ Ω ]
C
o
[V]
C
GE
16
o
80
80
C
GE
= 15V
20
100
100
5
Figure 8. Capacitance Characteristics
4000
3000
2000
1000
Figure 10. SOA Characteristics
0.01
1000
500
5500
100
Figure 12. Turn-off Characteristics vs.
0.1
100
10
10
0
1
0.1
1
0
*Notes:
Common Emitter
V
I
T
T
C
C
C
1. T
2. T
3. Single Pulse
CC
= 20A
= 25
= 125
Collector-Emitter Voltage, V
= 200V, V
C
J
Collector-Emitter Voltage, V
= 150
= 25
Gate Resistance
o
20
C
o
C
Gate Resistance, R
o
o
C
C
C
C
C
GE
ies
oes
res
10
= 15V
40
1
60
Common Emitter
V
T
GE
C
G
= 25
[
= 0V, f = 1MHz
Ω
CE
100
100
10 ms
]
1ms
DC
CE
o
[V]
t
t
C
d(off)
f
μ
10
80
s
[V]
10
μ
s
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100
30
500