FGA50N100BNTD Fairchild Semiconductor, FGA50N100BNTD Datasheet - Page 3

• Manufacturer Part Number: FGA50N100BNTD
• Description: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness
• Manufacturer: Fairchild Semiconductor

©2008Fairchild Semiconductor Corporation
200
160
120
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
80
40
0
10
0
8
6
4
2
0
3
2
1
-50
Common Emitter
T
4
C
=25
Common Emitter
V
Temperature at Varient Current Level
GE
o
C
=15V
1
Collector-Emitter Voltage, V
0
Gate-Emitter Voltage, V
Case Temperature, T
8
I
C
= 10A
2
80A
30A
60A
50
12
3
CE
C
[
GE
o
[V]
C]
100
GE
20V
4
[V]
Common Emitter
T
16
C
= 25
V
I
15V
C
GE
=10A
80A
60A
30A
o
=6V
10V
C
9V
8V
7V
150
5
20
200
160
120
80
40
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
0
0
10
10
Common Emitter
V
Tc= 25
Tc=125
8
6
4
2
0
8
6
4
2
0
GE
4
=15V
4
o
o
C
C
1
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
8
Gate-Emitter Voltage, V
8
I
C
=10A
I
C
60A
30A
80A
2
= 10A
80A
30A
60A
12
FGA50N100BNTD 1000V, 50A NPT-Trench IGBT
12
3
CE
GE
GE
GE
Common Emitter
T
[V]
[V]
C
16
GE
= - 40
4
[V]
Common Emitter
T
16
C
= 125
O
C
o
C
20
CO-PAK Rev. A1
5
20