FGA50N100BNTD Fairchild Semiconductor, FGA50N100BNTD Datasheet - Page 5

• Manufacturer Part Number: FGA50N100BNTD
• Description: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness
• Manufacturer: Fairchild Semiconductor

©2008Fairchild Semiconductor Corporation
Fig 13. Forward Characteristics
Fig 15. Reverse Recovery Characteristics vs.
Fig 17. Junction capacitance
100
1.2
1.0
0.8
0.6
0.4
0.1
10
250
200
150
100
1
50
10
0
0.0
0.1
Forward Current
20
0.5
T
C
= 100
Forward Current, I
Reverse Voltage, V
Forward Voltage, V
t
rr
30
1
o
C
1.0
I
rr
T
C
= 25
40
F
o
C
1.5
[A]
di/dt=-20A/us
T
C
10
R
=25
FM
50
[V]
[V]
o
C
2.0
T
C
60
= 25
12
10
8
6
4
o
C
100
2.5
Fig 14. Reverse Recovery Characteristics
Fig 16. Reverse Current vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
1E-3
0.01
100
0.1
10
0
1
0
vs. di/dt
40
80
Reverse Voltage, V
300
T
di/dt [A/us]
C
T
I
= 150
rr
C
t
rr
120
= 25
o
o
C
C
FGA50N100BNTD 1000V, 50A NPT-Trench IGBT
160
600
R
200
I
T
[V]
F
= 60 A
C
= 25
o
C
240
900
120
100
80
60
40
20
0
CO-PAK Rev. A1