SGF23N60UF Fairchild Semiconductor, SGF23N60UF Datasheet - Page 4

• Manufacturer Part Number: SGF23N60UF
• Description: Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
1000
200
100
100
1200
1000
50
10
800
600
400
200
0
1
1
Common Emitter
V
I
T
T
Ton
C
Gate Resistance
CC
C
C
Common Emitter
V
R
T
T
Tr
= 12A
= 25℃
= 125℃
C
C
CC
G
Collector Current
= 300V, V
4
= 25℃
= 125℃
= 23
= 300V, V
Collector - Emitter Voltage, V
GE
GE
8
Gate Resistance, R
= ± 15V
= ± 15V
Collector Current, I
Cies
Coes
Cres
10
12
16
G
C
10
[ ]
Common Emitter
V
T
[A]
C
GE
CE
= 25℃
= 0V, f = 1MHz
[V]
20
100
Toff
Toff
Tf
Tf
200
24
30
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
100
100
200
100
10
30
50
1
1
Toff
Common Emitter
V
I
T
T
C
Gate Resistance
Common Emitter
V
R
T
T
Tf
CC
C
C
= 12A
CC
C
C
= 25℃
= 125℃
G
Collector Current
= 300V, V
4
= 25℃
= 125℃
= 23
= 300V, V
GE
GE
8
Gate Resistance, R
= ± 15V
Gate Resistance, R
= ± 15V
Collector Current, I
10
10
12
Common Emitter
V
I
T
T
C
CC
C
C
16
= 12A
= 25℃
= 125℃
G
G
= 300V, V
C
[ ]
[ ]
[A]
20
GE
100
100
= ± 15V
Toff
Ton
Eon
Eoff
Eon
Eoff
Tr
SGF23N60UF Rev. A
Tf
200
200
24