SGF23N60UF Fairchild Semiconductor, SGF23N60UF Datasheet - Page 5

• Manufacturer Part Number: SGF23N60UF
• Description: Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
100
300
100
0.1
10
10
1
0.3
Eoff
Eon
Eoff
Eon
I
I
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
4
C
= 25℃
Collector-Emitter Voltage, V
1
8
0.01
0.1
10
Collector Current, I
1
1E-5
0.05
0.02
0.01
DC Operation
0.5
0.2
0.1
12
single pulse
10
Common Emitter
V
R
T
T
CC
C
C
G
16
1E-4
= 25℃
= 125℃
= 23
= 300V, V
C
1㎳
[A]
Fig 17. Transient Thermal Impedance of IGBT
CE
100
100us
[V]
20
GE
50us
= ± 15V
1E-3
1000
Rectangular Pulse Duration [sec]
24
0.01
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA Characteristics
200
100
0.1
15
12
10
1
9
6
3
0
1
0
Common Emitter
R
T
C
L
= 25
= 25℃
0.1
10
Collector-Emitter Voltage, V
V
CC
Pdm
Gate Charge, Q
= 100 V
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
10
300 V
GE
= 20V, T
20
1
t1
t2
C
200 V
= 100℃
Zthjc + T
30
g
[ nC ]
100
C
10
CE
[V]
40
SGF23N60UF Rev. A
1000
50