SGP10N60RUFD Fairchild Semiconductor, SGP10N60RUFD Datasheet - Page 3

• Manufacturer Part Number: SGP10N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
20
16
12
5
0
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
V
Temperature at Variant Current Level
Common Emitter
T
C
GE
C
= 25℃
= 25℃
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
0
Case Temperature, T
I
C
= 5A
8
20V
50
4
10A
15V
20A
12
C
[ ℃ ]
GE
GE
CE
100
[V]
6
[V]
16
V
GE
= 10V
I
C
20A
10A
= 5A
12V
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
30
25
20
15
10
20
16
12
16
14
12
10
5
0
8
6
4
2
0
8
4
0
0.1
0
Duty cycle : 50%
T
Power Dissipation = 18W
Common Emitter
V
T
T
C
Common Emitter
T
C
C
GE
= 100℃
C
= 25℃ ━━
= 125℃ ------
= 15V
= 125℃
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
1
C
= 5A
Frequency [KHz]
8
V
Load Current : peak of square wave
CC
= 300V
10
10A
12
20A
GE
GE
100
CE
[V]
[V]
16
10
SGP10N60RUFD Rev. A1
1000
20