SGP10N60RUFD Fairchild Semiconductor, SGP10N60RUFD Datasheet - Page 4

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SGP10N60RUFD

Manufacturer Part Number
SGP10N60RUFD
Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
1000
Fig 11. Turn-On Characteristics vs.
1400
1200
1000
100
100
800
600
400
200
10
0
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
CC
C
C
Gate Resistance
= 10A
GE
C
C
6
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
= ± 15V, R
10
1
Collector - Emitter Voltage, V
8
GE
Gate Resistance, R
= ± 15V
G
= 20
Collector Current, I
10
12
14
G
C
10
[ ]
Common Emitter
V
T
100
[A]
C
GE
16
Coes
Cres
CE
= 25℃
Cies
= 0V, f = 1MHz
[V]
18
Toff
Toff
Tf
Tf
Ton
Tr
20
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
100
100
100
10
Toff
Tf
Toff
Tf
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
Gate Resistance
C
Common Emitter
V
T
T
CC
C
C
C
C
CC
= 10A
= 10A
C
C
6
GE
= 25℃ ━━
= 125℃ ------
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
= 300V, V
= ± 15V, R
10
8
10
GE
GE
Gate Resistance, R
Gate Resistance, R
G
= ± 15V
= ± 15V
= 20
Collector Current, I
10
12
14
G
G
C
[ ]
[ ]
[A]
100
16
100
SGP10N60RUFD Rev. A1
18
Eoff
Eon
Eoff
Ton
Tr
20

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