SGP23N60UF Fairchild Semiconductor, SGP23N60UF Datasheet
SGP23N60UF
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SGP23N60UF Summary of contents
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... G G TO-220 unless otherwise noted C Description @ 100 100 C C Parameter IGBT = 2 12A CE(sat SGP23N60UF Units 600 100 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.2 C/W -- 62.5 C/W SGP23N60UF Rev. A1 ...
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... Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 4.5 6.5 V 2.1 2 720 -- pF 100 -- 130 ns 70 150 ns 115 -- uJ 135 -- uJ 250 400 100 200 ns 220 250 ns 205 -- uJ 320 -- uJ 525 800 7 SGP23N60UF Rev. A1 ...
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... GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] Common Emitter T = 125℃ C 24A 12A Gate - Emitter Voltage SGP23N60UF Rev. A1 ...
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... Eoff Common Emitter = ± 15V V = 300V 12A 25℃ 125℃ 100 Gate Resistance ± 15V = 300V 25℃ 125℃ Toff Collector Current, I [A] C Collector Current SGP23N60UF Rev. A1 200 200 24 ...
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... Fig 17. Transient Thermal Impedance of IGBT = 25℃ C 300 V 200 100 Gate Charge Safe Operating Area V = 20V 100℃ 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGP23N60UF Rev 1000 ...
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... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters SGP23N60UF Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...