SGP23N60UF Fairchild Semiconductor, SGP23N60UF Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
SGP23N60UF
Manufacturer Part Number
SGP23N60UF
Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
Manufacturer
Fairchild Semiconductor
Datasheet
1.SGP23N60UF.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SGP23N60UF
Manufacturer:
FAIRCHIL
Quantity:
12 500
Company:
Part Number:
SGP23N60UFD
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
SGP23N60UFDTU
Manufacturer:
FSC
Quantity:
3 000
©2002 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
100
300
100
0.1
10
10
1
0.3
Eoff
Eon
Eoff
Eon
I
I
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
4
C
= 25℃
Collector-Emitter Voltage, V
1
0.005
8
0.01
0.1
Collector Current, I
5
1
10
-5
0.02
0.01
DC Operation
0.5
0.1
0.05
0.2
12
single pulse
10
Common Emitter
V
R
T
T
CC
C
C
G
16
= 25℃
= 125℃
= 23
10
= 300V, V
C
1㎳
[A]
-4
Fig 17. Transient Thermal Impedance of IGBT
CE
100
100us
[V]
20
GE
50us
= ± 15V
10
1000
Rectangular Pulse Duration [sec]
-3
24
10
-2
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA Characteristics
200
100
0.1
15
12
10
1
9
6
3
0
1
0
Common Emitter
R
T
C
L
= 25
= 25℃
10
-1
10
Collector-Emitter Voltage, V
V
CC
Pdm
Gate Charge, Q
= 100 V
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
10
300 V
GE
= 20V, T
20
10
t1
0
t2
C
200 V
= 100℃
Zthjc + T
30
g
[ nC ]
100
C
10
CE
1
[V]
40
SGP23N60UF Rev. A1
1000
50