FDD86540 Fairchild Semiconductor, FDD86540 Datasheet
FDD86540
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FDD86540 Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86540 FDD86540 ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node = 19 ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3: Starting 0.3 mH ©2012 Fairchild Semiconductor Corporation FDD86540 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDD86540 Rev °C unless otherwise noted μ 5 100 125 150 ...
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... MAX RATED 0.98 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDD86540 Rev °C unless otherwise noted J 10000 1000 140 120 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 13. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86540 Rev °C unless otherwise noted J SINGLE PULSE 0.98 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...