FDD86540 Fairchild Semiconductor, FDD86540 Datasheet - Page 4

• Manufacturer Part Number: FDD86540
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
Typical Characteristics
100
200
100
0.1
10
10
10
1
Figure 7.
0.01
1
8
6
4
2
0
0.1
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11.
I
D
= 21.5 A
10
V
Switching Capability
0.1
DS
Gate Charge Characteristics
SINGLE PULSE
T
R
T
t
, DRAIN to SOURCE VOLTAGE (V)
AV
J
C
θ
Operating Area
JC
Unclamped Inductive
= MAX RATED
= 25
20
DS(on)
, TIME IN AVALANCHE (ms)
Q
1
g
= 0.98
, GATE CHARGE (nC)
Forward Bias Safe
o
C
30
o
V
1
C/W
DD
T
J
T
= 30 V
= 125
J
= 25
40
T
10
J
V
o
= 25 °C unless otherwise noted
DD
o
V
C
C
10
DD
= 20 V
T
50
= 40 V
J
= 100
60
o
100 300
10 ms
C
100
1 ms
DC
100 200
μ
s
70
4
10000
10000
1000
1000
140
120
100
100
100
80
60
40
20
10
0
Figure 10.
0.1
10
25
Figure 12. Single Pulse Maximum
-6
Limited by Package
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
V
50
DS
-5
Maximum Continuous Drain
Power Dissipation
V
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
T
GS
C
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
= 8 V
CASE TEMPERATURE
10
1
-4
75
V
GS
10
= 10 V
-3
100
10
R
SINGLE PULSE
R
T
-2
10
(
θ
C
θ
o
JC
JC
C
= 25
)
C
C
= 0.98
125
C
= 0.98
iss
oss
www.fairchildsemi.com
rss
10
o
C
-1
o
o
C/W
C/W
150
60
1