FDMS015N04B Fairchild Semiconductor, FDMS015N04B Datasheet

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FDMS015N04B

Manufacturer Part Number
FDMS015N04B
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C1
MOSFET Maximum Ratings
Thermal Characteristics
FDMS015N04B
N-Channel PowerTrench
40V, 100A, 1.5mW
Features
• R
• Advanced Package and Silicon Combination for Low R
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
V
V
I
I
E
P
T
R
R
D
DM
J
DSS
GSS
AS
D
qJC
qJA
, T
and High Efficiency
Symbol
Symbol
DS(on)
STG
= 1.13mW (Typ.)@ V
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Top
GS
Power 56
= 10V, I
D
D
D
= 50A
T
C
D
= 25
D
®
Bottom
o
Parameter
MOSFET
Parameter
C unless otherwise noted*
- Continuous (T
- Continuous (T
(T
(T
- Pulsed
C
A
= 25
= 25
DS(on)
S
o
o
S
C)
C)
S
1
Pin 1
G
C
A
Description
This
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger and Battery Protection circuit
• DC motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
= 25
= 25
o
o
C)
C)
N-Channel
D
D
D
D
MOSFET
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
5
6
7
8
is
-55 to +150
produced
Ratings
Ratings
31.3
±20
100
400
526
104
1.2
2.5
50
40
February 2012
4
3
2
1
using
www.fairchildsemi.com
G
S
S
S
Units
Units
o
Fairchild
C/W
mJ
o
W
W
V
V
A
A
C

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FDMS015N04B Summary of contents

Page 1

... STG Thermal Characteristics Symbol R Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA ©2012 Fairchild Semiconductor Corporation FDMS015N04B Rev. C1 ® MOSFET Description = 50A This N-Channel D Semiconductor’s advance PowerTrench process that has been DS(on) especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 3mH 18.72A, Starting T = 25° Essentially Independent of Operating Temperature Typical Characteristics FDMS015N04B Rev. C1 Package Reel Size Power 56 13 ” unless otherwise noted C ...

Page 3

... Figure 5. Capacitance Characteristics 10000 1000 *Note 1MHz C iss = shorted C oss = 100 C rss = 0 Drain-Source Voltage [V] DS FDMS015N04B Rev. C1 Figure 2. Transfer Characteristics 400 100 V = 15.0V GS 10.0V 10 8.0V 7.0V 6.5V 6.0V 5.5V 5. 2.5 Figure 4. Body Diode Forward Voltage 400 ...

Page 4

... T = 150 Single Pulse 0.01 0.01 0 Drain-Source Voltage [V] DS Figure 11. Eoss vs. Drain to Source Voltage 2.0 1.5 1.0 0 Drain to Source Voltage DS FDMS015N04B Rev. C1 (Continued) Figure 8. On-Resistance Variation *Notes 250 120 160 Figure 10. Maximum Drain Current 1ms 10ms 100ms ...

Page 5

... Typical Performance Characteristics 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.005 0.01 FDMS015N04B Rev. C1 (Continued) Figure 13. Transient Thermal Response Curve 0.1 1 Rectangular Pulse Duration [sec *Notes (t) = 125 C/W Max Duty Factor ( 100 1000 www.fairchildsemi.com ...

Page 6

... FDMS015N04B Rev. C1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDMS015N04B Rev. C1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 8

... Dimensional Outline and Pad Layout FDMS015N04B Rev www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS015N04B Rev. C1 PDP SPM™ Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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