FDMS015N04B Fairchild Semiconductor, FDMS015N04B Datasheet - Page 4

• Manufacturer Part Number: FDMS015N04B
• Manufacturer: Fairchild Semiconductor

FDMS015N04B Rev. C1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Eoss vs. Drain to Source Voltage
1000
0.01
1.12
1.08
1.04
1.00
0.96
0.92
100
0.1
2.0
1.5
1.0
0.5
10
1
0.01
0
-80
0
*Notes:
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
vs. Temperature
vs. Ambient Temperature
C
J
-40
= 150
= 25
V
T
DS
V
J
0.1
10
, Junction Temperature
DS
, Drain to Source Voltage
o
o
C
C
, Drain-Source Voltage [V]
0
DS(on)
40
20
1
DC
100ms
80
10ms
*Notes:
10
30
[
1. V
2. I
o
1ms
C
[
D
120
V
GS
]
= 250
]
= 0V
m
A
160
100
40
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
Figure 12. Unclamped Inductive
120
1.7
1.6
1.4
1.2
1.0
0.8
0.6
50
10
80
40
1
0
0.1
-80
25
R
q
JC
STARTING T
= 1.2
-40
vs. Temperature
50
T
o
T
C/W
Switching Capability
J
t
C
, Junction Temperature
1
AV
, Case Temperature [
If R = 0
t
If R = 0
t
, Time In Avalanche [ms]
AV
AV
= (L)
= (L/R)In
0
J
= 125
75
(
I
AS
)
[(
/
(
1.3*RATED BV
I
AS
o
10
40
C
*R
)
STARTING T
/
(
1.3*RATED BV
100
80
DSS
o
*Notes:
100
C]
-V
V
[
1. V
2. I
DD
GS
o
125
)
J
C
DSS
= 10V
D
= 25
120
]
GS
-V
= 50A
www.fairchildsemi.com
DD
= 10V
)
o
+1
C
]
1000
160
150