FDMS86310 Fairchild Semiconductor, FDMS86310 Datasheet - Page 3

• Manufacturer Part Number: FDMS86310
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
Typical Characteristics
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On- Resistance
Figure 1.
0
0
-75
Figure 5. Transfer Characteristics
2
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 17 A
vs Junction Temperature
= 5 V
= 10 V
V
V
3
DS
GS
T
V
V
1
-25
, DRAIN TO SOURCE VOLTAGE (V)
J
On-Region Characteristics
GS
GS
V
,
= 7 V
JUNCTION TEMPERATURE
GS
, GATE TO SOURCE VOLTAGE (V)
= 8 V
= 10 V
4
0
T
J
2
= 150
25
μ
s
5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
T
J
3
= 25 °C unless otherwise noted
75
6
T
J
T
(
= -55
J
100 125 150
o
C
= 25
V
V
V
4
)
GS
GS
GS
7
o
C
o
= 6.5 V
= 5.5 V
= 6 V
C
μ
s
8
5
3
0.001
0.01
100
0.1
10
18
15
12
6
5
4
3
2
1
0
Figure 2.
Figure 4.
1
9
6
3
0
0.0
Forward Voltage vs Source Current
0
5
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
V
T
GS
SD
= 0 V
J
0.2
= 150
= 5.5 V
, BODY DIODE FORWARD VOLTAGE (V)
20
Normalized On-Resistance
V
6
On-Resistance vs Gate to
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
Source Voltage
I
D
D
Source to Drain Diode
o
,
,
C
= 17 A
T
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
J
0.4
= 25
V
GS
40
7
= 6 V
o
C
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
60
8
0.8
μ
T
T
V
s
J
J
GS
= 125
T
= -55
J
= 6.5 V
= 25
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80
o
1.0
V
9
o
C
V
V
GS
C
o
GS
GS
C
= 10 V
= 7 V
= 8 V
μ
s
1.2
100
10