FDMS86310 Fairchild Semiconductor, FDMS86310 Datasheet - Page 4

• Manufacturer Part Number: FDMS86310
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
Typical Characteristics
0.01
100
200
100
0.1
10
10
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11.
I
D
= 17 A
10
V
Switching Capability
0.1
SINGLE PULSE
T
R
T
DS
0.1
Gate Charge Characteristics
J
A
t
θ
, DRAIN to SOURCE VOLTAGE (V)
AV
JA
= MAX RATED
Operating Area
= 25
Unclamped Inductive
20
DS(on)
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
Forward Bias Safe
o
C
o
C/W
30
1
1
V
DD
T
T
J
= 30 V
J
= 25
= 125
40
T
J
V
o
= 25 °C unless otherwise noted
DD
T
C
10
J
o
10
C
= 100
= 40 V
50
V
o
DD
C
60
100
= 50 V
100 300
100 ms
1 s
10 s
DC
1 ms
10 ms
400
70
4
10000
1000
1000
120
100
100
0.5
90
60
30
10
10
0
Figure 10.
1
5
10
0.1
25
-3
Figure 12. Single Pulse Maximum
f = 1 MHz
V
Limited by Package
GS
Figure 8.
Current vs Case Temperature
= 0 V
10
V
V
50
DS
GS
-2
Maximum Continuous Drain
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
= 8 V
T
C
,
Capacitance vs Drain
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
10
1
-1
75
1
V
GS
= 10 V
100
10
10
SINGLE PULSE
R
T
R
A
θ
θ
JC
JA
o
= 25
C )
= 1.3
= 125
125
C
C
C
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o
100
iss
oss
rss
C
o
o
C/W
C/W
1000
150
100