FDMS3664S Fairchild Semiconductor, FDMS3664S Datasheet - Page 7

• Manufacturer Part Number: FDMS3664S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3664S Rev.C1
Typical Characteristics (Q2 N-Channel)
100
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.0
-75
1.0
Figure 18. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
= 25 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
V
T
V
DS
-25
J
GS
,
0.2
1.5
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
GS
0
V
= 3 V
GS
T
V
V
= 3.5 V
25
T
J
GS
GS
μ
J
= 25
s
0.4
2.0
= 125
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 4 V
= 10 V
GS
50
o
C
= 4.5 V
o
C
75
0.6
2.5
o
T
100 125 150
C )
J
= -55
o
μ
C
s
0.8
3.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
10
10
8
6
4
2
0
4
3
2
1
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
Current and Gate Voltage
= 0 V
V
SD
0.2
20
, BODY DIODE FORWARD VOLTAGE (V)
V
T
GS
J
I
Source Voltage
= 125
D
4
,
,
T
T
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
J
J
V
= 125
= 25
GS
o
C
= 4 V
0.4
40
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
V
o
C
J
C
GS
= -55
μ
s
6
= 3 V
T
J
V
o
I
= 25
GS
C
D
0.6
60
= 25 A
= 4.5 V
o
C
V
GS
= 3.5 V
8
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0.8
80
V
GS
μ
s
= 10 V
100
1.0
10