FDMS3664S Fairchild Semiconductor, FDMS3664S Datasheet - Page 8

• Manufacturer Part Number: FDMS3664S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3664S Rev.C1
Typical Characteristics (Q2 N-Channel)
100
0.01
200
100
10
0.1
10
Figure 20. Gate Charge Characteristics
10
0.001
1
8
6
4
2
0
0.01
1
0
Figure 22. Unclamped Inductive
I
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
D
Figure 24. Forward Bias Safe
J
A
θ
= 25 A
JA
= MAX RATED
= 25
= 120
0.01
Switching Capability
V
o
C
DS
0.1
t
10
o
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
C/W
DS
, TIME IN AVALANCHE (ms)
Q
(
on
g
, GATE CHARGE (nC)
)
0.1
T
V
J
V
DD
= 125
DD
1
= 10 V
20
T
= 20 V
J
= 25
o
C
1
V
o
DD
T
C
J
= 100
= 15 V
10
30
o
C
10
10 ms
1 ms
100 ms
1s
10s
100
DC
100200
μ
s
100
40
T
J
8
= 25
o
C unless otherwise noted
10000
1000
120
100
3000
1000
100
80
60
40
20
100
10
0
0.5
10
Figure 23. Maximun Continuous Drain
25
1
10
0.1
Figure 25. Single Pulse Maximum
-4
Figure 21. Capacitance vs Drain
Limited by Package
f = 1 MHz
V
V
Current vs Case Temperature
GS
GS
10
= 0 V
= 4.5 V
-3
V
50
DS
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
10
t, PULSE WIDTH (sec)
,
CASE TEMPERATURE (
V
-2
GS
= 10 V
75
1
10
-1
100
1
SINGLE PULSE
R
R
θ
JA
10
o
θ
C )
JC
= 120
125
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= 2.3
10
100
C
C
o
C
C/W
rss
o
oss
iss
C/W
150
1000
30