FDZ661PZ Fairchild Semiconductor, FDZ661PZ Datasheet - Page 2

• Manufacturer Part Number: FDZ661PZ
• Description: Designed on Fairchild's advanced 1
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 93 °C/W when mounted on
a 1 in
2
2
T
pad of 2 oz copper.
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
V
V
V
I
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
V
V
V
I
D
D
D
D
F
DS
DD
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
DD
GS
= -2.5 A
= -2.5 A, di/dt = 100 A/μs
= -250 μA, V
= -250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= -4.5 V, V
= -10 V, V
= -10 V, I
= -4.5 V, R
= -16 V, V
= 0 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -5 V, I
2
DS
Test Conditions
, I
S
D
D
= -1.4 A
D
DS
D
D
D
D
D
= -2 A
= -250 μA
GS
GS
DD
GS
= -2.5 A,
GEN
= -2 A
= -1.5 A
= -1 A
= -1 A
= -2 A, T
= 0 V
= 0 V
= 0 V,
= -10 V,
= 0 V
= 6 Ω
J
(Note 2)
=125°C
θJC
is guaranteed by design while R
b. 311 °C/W when mounted on a
minimum pad of 2 oz copper.
Min
-0.3
-20
Typ
-0.7
-0.9
108
129
159
201
143
416
-13
2.5
7.8
4.9
6.3
6.3
0.6
1.7
29
10
61
53
68
33
θCA
Max
-1.2
-1.2
140
182
231
315
204
555
108
8.8
±6
80
70
10
13
52
46
18
www.fairchildsemi.com
-1
is determined by
mV/°C
mV/°C
Units
mΩ
μA
μA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
S