FDZ661PZ Fairchild Semiconductor, FDZ661PZ Datasheet - Page 4

• Manufacturer Part Number: FDZ661PZ
• Description: Designed on Fairchild's advanced 1
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Typical Characteristics
10
10
10
10
10
10
10
10
10
10
4.5
3.0
1.5
1000
-10
Figure 7.
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
100
0.1
10
0
0
1
Figure 9.
10
I
D
V
-4
DS
= -2.5 A
vs Gate to Source Voltage
= 0 V
V
DD
Gate Charge Characteristics
- V
= -10 V
2
Gate Leakage Current
GS
Q
g
, GATE TO SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
5
10
V
-3
T
T
DD
J
J
= 125
= 25
= -8 V
4
Figure 11. Single Pulse Maximum Power Dissipation
o
V
o
C
T
DD
C
J
= -12 V
= 25 °C unless otherwise noted
10
10
-2
6
t, PULSE WIDTH (sec)
15
8
10
-1
4
0.001
2000
1000
0.01
100
0.1
50
10
10
1
1
0.1
0.1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25 o C
f = 1 MHz
V
Figure 8.
θ
GS
Figure 10.
JA = 311
= 0 V
-V
-V
DS
DS
to Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
o C/W
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
DS(on)
Capacitance vs Drain
10
Forward Bias Safe
1
1
C
C
C
iss
oss
rss
SINGLE PULSE
R
T
A
θ
100
JA
= 25
= 311
10
o
C
o
C/W
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10 ms
100 ms
1 s
100 us
10 s
1 ms
DC
10
1000
100
20