FDZ663P Fairchild Semiconductor, FDZ663P Datasheet - Page 3

• Manufacturer Part Number: FDZ663P
• Description: Designed on Fairchild's advanced 1
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDZ663P Rev.C1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
10
10
8
6
4
2
0
8
6
4
2
0
-75
Figure 3. Normalized On- Resistance
0
0
Figure 1.
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
V
V
D
-50
GS
GS
GS
= -2 A
= -5 V
-V
vs Junction Temperature
= -4.5 V
= -4.5 V
= -3 V
DS
0.5
-V
T
-25
J
, DRAIN TO SOURCE VOLTAGE (V)
GS
,
V
JUNCTION TEMPERATURE
On-Region Characteristics
GS
, GATE TO SOURCE VOLTAGE (V)
V
= -1.5 V
1
0
T
GS
J
1.0
= 150
V
= -1.8 V
GS
25
μ
= -2.5 V
s
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
1.5
T
J
T
= 25 °C unless otherwise noted
75
2
T
J
J
= -55
= 25
(
100 125 150
o
C
2.0
o
)
o
C
C
μ
s
2.5
3
3
0.001
600
450
300
150
0.01
0.1
Figure 2.
10
3
2
1
0
0
1.0
1
0
Figure 4.
0
Forward Voltage vs Source Current
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
Figure 6.
V
Drain Current and Gate Voltage
GS
1.5
= 0 V
-V
-V
0.2
SD
Normalized On-Resistance vs
GS
2
, BODY DIODE FORWARD VOLTAGE (V)
T
-
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
I
J
D
2.0
Source Voltage
V
= 150
I
Source to Drain Diode
,
D
GS
DRAIN CURRENT (A)
= -2 A
0.4
T
= -1.5 V
J
T
o
= 125
J
C
4
= 25
2.5
μ
s
o
o
0.6
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
C
GS
V
3.0
T
= -3 V
GS
J
6
= -55
= -1.8 V
T
0.8
J
3.5
= 25
o
C
V
GS
V
o
GS
C
= -2.5 V
8
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1.0
= -4.5 V
4.0
μ
s
4.5
10
1.2