FDZ663P Fairchild Semiconductor, FDZ663P Datasheet - Page 4

• Manufacturer Part Number: FDZ663P
• Description: Designed on Fairchild's advanced 1
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDZ663P Rev.C1
Typical Characteristics
0.001
0.01
4.5
3.0
1.5
0.1
50
10
0
1
Figure 7.
0.1
0.001
0
0.01
0.1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25 o C
I
D
2
1
θ
10
JA = 311
= -2.5 A
Figure 9.
-4
-V
DUTY CYCLE-DESCENDING ORDER
D = 0.5
DS
o C/W
, DRAIN to SOURCE VOLTAGE (V)
Gate Charge Characteristics
0.2
0.1
0.05
0.02
0.01
V
DD
DS(on)
Operating Area
Q
g
Forward Bias Safe
= -10 V
2
, GATE CHARGE (nC)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
1
10
V
-3
DD
= -8 V
V
T
DD
J
= 25 °C unless otherwise noted
10
4
= -12 V
10
-2
10 ms
100 ms
1 s
10 s
100 us
1 ms
DC
SINGLE PULSE
R
θ
JA
= 311
t, RECTANGULAR PULSE DURATION (sec)
100
6
o
C/W
10
-1
4
2000
1000
1000
100
100
0.1
10
10
1
10
0.1
1
Figure 10. Single Pluse Maximum
-4
f = 1 MHz
V
Figure 8.
GS
= 0 V
10
-V
-3
DS
Power Dissipation
to Source Voltage
NOTES:
DUTY FACTOR: D = t
PEAK T
, DRAIN TO SOURCE VOLTAGE (V)
10
Capacitance vs Drain
t, PULSE WIDTH (sec)
10
-2
J
= P
10
1
DM
-1
x Z
P
θJA
DM
1
1
/t
x R
2
100
SINGLE PULSE
R
T
θJA
A
θ
JA
t
= 25
1
10
+ T
= 311
t
2
A
o
C
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o
100
C/W
10
C
C
C
oss
iss
rss
1000
1000
20