FDMC86320 Fairchild Semiconductor, FDMC86320 Datasheet

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FDMC86320

Manufacturer Part Number
FDMC86320
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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FDMC86320
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©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC86320
N-Channel Power Trench
80 V, 22 A, 11.7 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
MSL1 robust package design
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86320
DS(on)
DS(on)
= 11.7 mΩ at V
= 16 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
MLP 3.3x3.3
GS
GS
= 8 V, I
FDMC86320
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
= 8.5 A
Pin 1
D
= 10.7 A
T
A
®
= 25 °C unless otherwise noted
S
S
Parameter
MOSFET
S
G
Bottom
Power 33
Package
1
D
T
T
T
T
T
D
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
= 25 °C
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
G
S
S
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
10.7
±20
2.3
3.1
80
22
45
50
60
40
53
December 2011
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86320 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86320 FDMC86320 ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev. C ® MOSFET General Description = 10.7 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node = 8 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev °C unless otherwise noted 6 μ 5 100 125 150 ...

Page 4

... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev °C unless otherwise noted J 3000 1000 100 C J ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... TOP VIEW 0.8 MAX 0.10 C 0.08 C 0.05 0.00 SIDE VIEW SEATING PLANE PIN #1 IDENT 1 0.55 (4X) 0.45 1.15 R0.15 0.30 8 0.65 BOTTOM VIEW ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev 3.30 0. (0.20) 2.32 2.22 A. DOES NOT CONFORM TO JEDEC 0. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER 0.35 D. LAND PATTERN RECOMMENDATION IS 2.05 1.95 E. DRAWING FILE NAME : MLP08Srev1 5 ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC86320 Rev. C ® tm ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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