FDMC86320 Fairchild Semiconductor, FDMC86320 Datasheet - Page 2

• Manufacturer Part Number: FDMC86320
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 0.3 mH, I
Parameter
AS
= 20 A, V
DD
2
T
a. 53 °C/W when mounted on a
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 72 V, V
1 in
= 25 °C unless otherwise noted
2
pad of 2 oz copper
GS
= 10 V.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 10.7 A, di/dt = 100 A/μs
= 64 V, V
= 10 V, I
= ±20 V, V
= V
= 10 V, I
= 8 V, I
= 10 V, I
= 40 V, V
= 0 V to 10 V
= 0 V to 8 V
= 0 V, I
= 0 V, I
= 40 V, I
= 10 V, R
2
DS
Test Conditions
, I
S
S
D
D
D
D
D
D
= 10.7 A
= 2 A
GS
GS
= 8.5 A
GS
GEN
= 10.7 A, T
= 250 μA
= 10.7 A,
DS
= 10.7 A
= 10.7 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 10.7 A
= 40 V,
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 125 °C/W when mounted on a
Min
2.4
80
minimum pad of 2 oz copper
1985
0.84
0.75
11.4
Typ
353
3.5
-11
9.7
0.5
6.9
56
15
20
12
15
20
29
24
10
38
27
8
5
2640
θCA
±100
Max
11.7
469
www.fairchildsemi.com
1.3
1.2
4.5
28
16
35
10
41
34
30
61
43
16
18
1
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
Ω
V
V
V
S