FDD8424H_F085A Fairchild Semiconductor, FDD8424H_F085A Datasheet

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FDD8424H_F085A

Manufacturer Part Number
FDD8424H_F085A
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
FDD8424H
Dual N & P-Channel PowerTrench
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Features
Q1: N-Channel
Q2: P-Channel
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
E
T
R
R
D
DS
GS
D
AS
J
θJC
θJC
Max r
Max r
Max r
Max r
Fast switching speed
Qualified to AEC Q101
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD8424H
DS(on)
DS(on)
DS(on)
DS(on)
= 24mΩ at V
= 30mΩ at V
= 54mΩ at V
= 70mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
D1/D2
Dual DPAK 4L
_F085A
GS
GS
GS
GS
FDD8424H_F085A
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
Device
- Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
- Pulsed
D
D
D
S1
D
= 9.0A
= 7.0A
= -6.5A
G1
= -5.6A
S2
G2
T
C
= 25°C unless otherwise noted
Parameter
TO-252-4L
Package
®
1
MOSFET
General Description
These dual N and P-Channel enhancement
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
G1
T
T
T
T
T
C
A
A
C
A
= 25°C (Note 1a)
= 25°C (Note 1b)
= 25°C
= 25°C
= 25°C
Reel Size
N-Channel
13”
(Note 1)
(Note 1)
(Note 1)
(Note 3)
S1
D1
G2
Tape Width
±20
Q1
9.0
12mm
40
20
26
55
30
29
P-Channel
-55 to +150
D2
4.1
3.5
3.1
1.3
S2
±20
-6.5
Q2
-40
-20
-20
-40
October 2011
35
33
www.fairchildsemi.com
2500 units
mode Power
Quantity
Units
°C/W
mJ
°C
W
V
V
A
tm

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FDD8424H_F085A Summary of contents

Page 1

... Thermal Resistance, Junction to Case, Single Operation for Q2 θJC Package Marking and Ordering Information Device Marking Device FDD8424H FDD8424H_F085A ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 ® MOSFET General Description These dual N and P-Channel enhancement MOSFETs are produced using Fairchild Semiconductor’s = 9.0A D advanced PowerTrench- process that has been especially = 7 ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J Test Conditions I = 250µ -250µ 250µ ...

Page 3

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting T = 25°C, N-ch 0.3mH 14A ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J Test Conditions ...

Page 4

... PULSE DURATION = 80 s µ DUTY CYCLE = 0.5%MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J 3 4.0V GS 2.5 s µ 2 3.5V GS 1.5 1 3. 100 125 150 ...

Page 5

... R = 4.1 C/W JC θ 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J 2000 1000 V = 20V DD = 25V 100 Figure 10. Maximum Continuous Drain 10000 10us ...

Page 6

... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 4.1 C/W JC θ 0.005 - ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK T ...

Page 7

... DUTY CYCLE = 0.5%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J PULSE DURATION = 80 s µ DUTY CYCLE = 0.5%MAX V = -4. - -3. - Figure 15 ...

Page 8

... MAX RATED 3.5 C/W JC θ 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24 . Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J 2000 1000 V = -20V -25V DD 100 ...

Page 9

... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 3.5 JC θ 0.005 - ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. 25°C unless otherwise noted J C RECTANGULAR PULSE DURATION (s) Figure 26. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 10

... Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 11 www.fairchildsemi.com ...

Page 11

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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